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| PACKAGED HIGH DYNAMIC RANGE PHEMT * FEATURES 20 dBm Output Power at 1-dB Compression at 18 GHz 9.5 dB Power Gain at 18 GHz 16 dB Small Signal Gain at 2 GHz 0.8 dB Noise Figure at 2 GHz LPD200P70 * DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200's active areas are passivated with Si3 N4 , and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems and other types of commercial wireless systems. * ELECTRICAL SPECIFICATIONS @ TAmbient = 25C* Parameter Saturated Drain-Source Current** Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Symbol IDSS P-1dB G-1dB PAE NF IMAX GM IGSO VP |VBDGS| Test Conditions VDS = 2 V; VGS = 0 V VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS; PIN = 11 dBm VDS = 3.3 V; IDS = 25% IDSS; f=2 GHz VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 1 mA IGS = 1 mA -0.25 -6 -8 60 Min 40 19 8 20 9.5 50 0.7 125 80 1 -0.8 -7 -9 15 -1.5 Typ Max 85 Units mA dBm dB % dB mA mS A V V V Gate-Drain Breakdown |VBDGD| IGD = 1 mA Voltage Magnitude *frequency=18 GHz, unless otherwise noted **Formerly binned as: LPD200P70-1 = 40-65 mA and LPD200P70-2 = 66-85 mA Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: sales@filss.com PACKAGED HIGH DYNAMIC RANGE PHEMT * ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: * * Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C -- TAmbient = 22 3 C -65 Min Max 7 -3 IDSS 5 60 175 175 400 Units V V mA mA mW C C mW LPD200P70 * * Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25C: PTOT= 400mW - (3.1mW/C) x THS where THS = heatsink or ambient temperature. This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. * HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. * Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: sales@filss.com PACKAGED HIGH DYNAMIC RANGE PHEMT * PACKAGE OUTLINE (dimensions in mils) LPD200P70 All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: sales@filss.com |
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